Study of difference in interfacial reaction at Fe{sub 3}O{sub 4}/ZnO and ZnO/Fe{sub 3}O{sub 4} heterostructure using synchrotron radiation

Journal Article · Thu Apr 24 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4872817· OSTI ID:22271072

Master, Ridhi

We have prepared Fe{sub 3}O{sub 4}/ZnO and ZnO/Fe{sub 3}O{sub 4} bilayer structure on p-Si substrate using pulsed laser deposition technique (PLD). X-ray diffraction study revealed (0001) oriented growth of ZnO and (111) oriented growth of Fe{sub 3}O{sub 4} in both the bilayer structure. We observed a change in the density of states near the Fermi level in valence band spectra in case of Fe{sub 3}O{sub 4}/ZnO bilayer when compared to that of ZnO/Fe{sub 3}O{sub 4}. Nonlinear current–voltage (I-V) characteristics were observed in both the samples confirmed that these bilayer structures can be used for spintronic application.

• OSTI ID: 22271072
• Journal Information: AIP Conference Proceedings, Vol. 1591, Issue 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPARATIVE EVALUATIONS
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ENERGY BEAM DEPOSITION
FERMI LEVEL
HETEROJUNCTIONS
IRON OXIDES
LASER RADIATION
LAYERS
PULSED IRRADIATION
SUBSTRATES
SYNCHROTRON RADIATION
VALENCE
X-RAY DIFFRACTION
ZINC OXIDES