Electronic structure of Fe{sub 3}Si on Si(100) substrates

Journal Article · Thu Apr 24 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4872800· OSTI ID:22271058

Lal, Chhagan ^[1]; Di Santo, G.; Caputo, M.; Panighel, M.; Goldoni, A. ^[2]; Taleatu, B. A. ^[3]; Jain, I. P. ^[1]

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1. Centre for Non-Conventional Energy Resources, 14-Vigyan Bhavan, University of Rajasthan, Jaipur-302004 (India)
2. Synchrotron S.C.p.A., SS-14 km, 163.5, in Area Science Park, 34149, Basovizza, Trieste (Italy)
3. Department of Physics, Obafemi Awolowo University Ile-Ife (Nigeria)

The improved performance of large-scale integrated circuits (LSIs) by the shrinking of devices is becoming difficult due to physical limitations. Here we report, the growth and formation of Fe{sub 3}Si on Si(100) and characterized by x-ray photoemission, UV photoemission and low energy electron diffraction to study the electronic structure. The results revealed that the DO{sub 3} phase formation is exist and photoemission results also support the electron diffraction outcome.

• OSTI ID: 22271058
• Journal Information: AIP Conference Proceedings, Vol. 1591, Issue 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL STRUCTURE
ELECTRON DIFFRACTION
ELECTRONIC STRUCTURE
INTEGRATED CIRCUITS
IRON SILICIDES
PERFORMANCE
PHASE STABILITY
PHASE STUDIES
PHOTOEMISSION
SILICON
SUBSTRATES
X RADIATION