Boron- and phosphorus-doped silicon germanium alloy nanocrystals—Nonthermal plasma synthesis and gas-phase thin film deposition
- Department of Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota 55455 (United States)
Alloyed silicon-germanium (SiGe) nanostructures are the topic of renewed research due to applications in modern optoelectronics and high-temperature thermoelectric materials. However, common techniques for producing nanostructured SiGe focus on bulk processing; therefore little is known of the physical properties of SiGe nanocrystals (NCs) synthesized from molecular precursors. In this letter, we synthesize and deposit thin films of doped SiGe NCs using a single, flow-through nonthermal plasma reactor and inertial impaction. Using x-ray and vibrational analysis, we show that the SiGe NC structure appears truly alloyed for Si{sub 1−x}Ge{sub x} for 0.16 < x < 0.24, and quantify the atomic dopant incorporation within the SiGe NC films.
- OSTI ID:
- 22269557
- Journal Information:
- APL Materials, Vol. 2, Issue 2; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON
DEPOSITION
DEPOSITS
DOPED MATERIALS
GERMANIUM
GERMANIUM ALLOYS
GERMANIUM SILICIDES
NANOSTRUCTURES
PHOSPHORUS
PHYSICAL PROPERTIES
PLASMA
PRECURSOR
SILICON
SYNTHESIS
TEMPERATURE RANGE 0400-1000 K
THERMOELECTRIC MATERIALS
THIN FILMS
X RADIATION