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Title: Role of interface structure and chemistry in resistive switching of NiO nanocrystals on SrTiO{sub 3}

Journal Article · · APL Materials
DOI:https://doi.org/10.1063/1.4869457· OSTI ID:22269545
; ;  [1];  [2];  [3]
  1. School of Materials Science and Engineering, University of New South Wales, Sydney NSW 2052 (Australia)
  2. Department of Materials Engineering and Monash Centre for Electron Microscopy, Monash University, Melbourne VIC 3800 (Australia)
  3. Australian Centre for Microscopy and Microanalysis, University of Sydney, Sydney NSW 2006 (Australia)

Nickel oxide (NiO) nanocrystals epitaxially grown on (001) strontium titanate (SrTiO{sub 3}) single crystal substrates were characterized to investigate interface morphology and chemistry. Aberration corrected high angle annular dark field scanning transmission electron microscopy reveals the interface between the NiO nanocrystals and the underlying SrTiO{sub 3} substrate to be rough, irregular, and have a lower average atomic number than the substrate or the nanocrystal. Energy dispersive x-ray spectroscopy and electron energy loss spectroscopy confirm both chemical disorder and a shift of the energy of the Ti L{sub 2,3} peaks. Analysis of the O K edge profiles in conjunction with this shift, implies the presence of oxygen vacancies at the interface. This sheds light into the origin of the previously postulated minority carriers’ model to explain resistive switching in NiO [J. Sullaphen, K. Bogle, X. Cheng, J. M. Gregg, and N. Valanoor, Appl. Phys. Lett. 100, 203115 (2012)].

OSTI ID:
22269545
Journal Information:
APL Materials, Vol. 2, Issue 3; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
Country of Publication:
United States
Language:
English