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Title: Electric field control of magnetism using BiFeO{sub 3}-based heterostructures

Abstract

Conventional CMOS based logic and magnetic based data storage devices require the shuttling of electrons for data processing and storage. As these devices are scaled to increasingly smaller dimensions in the pursuit of speed and storage density, significant energy dissipation in the form of heat has become a center stage issue for the microelectronics industry. By taking advantage of the strong correlations between ferroic orders in multiferroics, specifically the coupling between ferroelectric and magnetic orders (magnetoelectricity), new device functionalities with ultra-low energy consumption can be envisioned. In this article, we review the advances and highlight challenges toward this goal with a particular focus on the room temperature magnetoelectric multiferroic, BiFeO{sub 3}, exchange coupled to a ferromagnet. We summarize our understanding of the nature of exchange coupling and the mechanisms of the voltage control of ferromagnetism observed in these heterostructures.

Authors:
 [1];  [2]
  1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)
  2. Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States)
Publication Date:
OSTI Identifier:
22269536
Resource Type:
Journal Article
Journal Name:
Applied Physics Reviews
Additional Journal Information:
Journal Volume: 1; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1931-9401
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CONTROL; COUPLING; DENSITY; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; ENERGY CONSUMPTION; ENERGY LOSSES; FERROELECTRIC MATERIALS; FERROMAGNETISM; MAGNETIC FIELDS; MAGNETIC PROPERTIES; MEMORY DEVICES; MICROELECTRONICS

Citation Formats

Heron, J. T., E-mail: jth247@cornell.edu, Schlom, D. G., Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, Ramesh, R., Department of Physics, University of California, Berkeley, California 94720, Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, and Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831. Electric field control of magnetism using BiFeO{sub 3}-based heterostructures. United States: N. p., 2014. Web. doi:10.1063/1.4870957.
Heron, J. T., E-mail: jth247@cornell.edu, Schlom, D. G., Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, Ramesh, R., Department of Physics, University of California, Berkeley, California 94720, Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, & Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831. Electric field control of magnetism using BiFeO{sub 3}-based heterostructures. United States. https://doi.org/10.1063/1.4870957
Heron, J. T., E-mail: jth247@cornell.edu, Schlom, D. G., Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, Ramesh, R., Department of Physics, University of California, Berkeley, California 94720, Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, and Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831. 2014. "Electric field control of magnetism using BiFeO{sub 3}-based heterostructures". United States. https://doi.org/10.1063/1.4870957.
@article{osti_22269536,
title = {Electric field control of magnetism using BiFeO{sub 3}-based heterostructures},
author = {Heron, J. T., E-mail: jth247@cornell.edu and Schlom, D. G. and Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 and Ramesh, R. and Department of Physics, University of California, Berkeley, California 94720 and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 and Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831},
abstractNote = {Conventional CMOS based logic and magnetic based data storage devices require the shuttling of electrons for data processing and storage. As these devices are scaled to increasingly smaller dimensions in the pursuit of speed and storage density, significant energy dissipation in the form of heat has become a center stage issue for the microelectronics industry. By taking advantage of the strong correlations between ferroic orders in multiferroics, specifically the coupling between ferroelectric and magnetic orders (magnetoelectricity), new device functionalities with ultra-low energy consumption can be envisioned. In this article, we review the advances and highlight challenges toward this goal with a particular focus on the room temperature magnetoelectric multiferroic, BiFeO{sub 3}, exchange coupled to a ferromagnet. We summarize our understanding of the nature of exchange coupling and the mechanisms of the voltage control of ferromagnetism observed in these heterostructures.},
doi = {10.1063/1.4870957},
url = {https://www.osti.gov/biblio/22269536}, journal = {Applied Physics Reviews},
issn = {1931-9401},
number = 2,
volume = 1,
place = {United States},
year = {Sun Jun 15 00:00:00 EDT 2014},
month = {Sun Jun 15 00:00:00 EDT 2014}
}