Beyond modulation doping: Engineering a semiconductor to be ambipolar, or making an ON-OFF-ON transistor
- Semiconductor Physics Group, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom)
Semiconductors are traditionaly either p-type or n-type, meaning that the mobile charge carriers in them are either 'holes' in the valence band or electrons in the conduction band. Ambipolar conduction implies that the experimenter should be able to populate the same channel with either electrons or holes in a controlled manner. This has been shown to be possible in newer materials like Graphene and some organic semiconductors. 'Ambipolarity' can open up new device possibilities as well as new ways to study fundamental scattering mechanisms in semiconductors. However, achieving this in a conventional high mobility structure like a GaAs-AlGaAs heterostructure/quantum well requires new thinking. It was realized, that to do this modulation doping must be given up and techniques to make an undoped heterostructure conduct, must be developed first. Such structures have been developed by only a few groups worldwide. They are of great interest to low temperature physicists working with Quantum Hall states and mesoscopic/nano structures in the ballistic regime. We discuss the reason behind this interest and the analysis of scattering mechanisms in such structures. Finally very recent experimental success in developing fully gate controlled ambipolar structures where both electron and hole mobilites exceed 1 million cm{sup 2}/Vs at low temperatures (T∼1Kelvin) are discussed. Such gated ambipolar structures can be used to analyse scattering mechanisms in ultra-high mobility 2dimensional electron and hole gases in a way that is not possible using other techniques.
- OSTI ID:
- 22269441
- Journal Information:
- AIP Conference Proceedings, Vol. 1591, Issue 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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