Modeling and simulation of CuIn{sub 1−x}Ga{sub x}Se{sub 2} based thin film solar cell

Journal Article · Thu Apr 24 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4872996· OSTI ID:22269334

Verma, A. S. ^[1]; Singh, P.; Gautam, R. ^[2]

---

1. Department of Physics, Banasthali University, Rajasthan-304022 (India)
2. Department of Electronics and Communication, Krishna Institute of Engg. and Tech., Ghaziabad-201206 (India)

In this work, CIGS (Copper Indium Gallium Diselenide) based solar cell structure has been simulated. We have been calculated short circuit current, open circuit voltage and efficiency of the cell. The thickness of the absorption layer is varied from 400 to 3000 nm, keeping the thickness of other layers unchanged. The effect of absorption layer thickness over cell performance has been analyzed and found that the efficiency increases upto 22% until the thickness of the absorption layer reaches around 2000 nm.

• OSTI ID: 22269334
• Journal Information: AIP Conference Proceedings, Vol. 1591, Issue 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
COPPER
EFFICIENCY
ELECTRIC POTENTIAL
GALLIUM
INDIUM
LAYERS
SIMULATION
SOLAR CELLS
THICKNESS
THIN FILMS