Variation of carrier concentration and interface trap density in 8MeV electron irradiated c-Si solar cells
Journal Article
·
· AIP Conference Proceedings
- Department of Physics, Mangalore Institute of Technology and Engineering, Moodabidri, Mangalore-574225 (India)
- Department of Physics, Sri Devi Institute of Technology, Kenjar, Mangalore-574142 (India)
- Microtron Centre, Department of Physics, Mangalore University, Mangalagangothri-574199 (India)
- Solar Panel Division, ISRO Satellite Centre, Bangalore-560017 (India)
The capacitance and conductance measurements were carried out for c-Si solar cells, irradiated with 8 MeV electrons with doses ranging from 5kGy – 100kGy in order to investigate the anomalous degradation of the cells in the radiation harsh environments. Capacitance – Voltage measurements indicate that there is a slight reduction in the carrier concentration upon electron irradiation due to the creation of radiation induced defects. The conductance measurement results reveal that the interface state densities and the trap time constant increases with electron dose due to displacement damages in c-Si solar cells.
- OSTI ID:
- 22269332
- Journal Information:
- AIP Conference Proceedings, Vol. 1591, Issue 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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