High total dose proton irradiation effects on silicon NPN rf power transistors

Journal Article · Thu Apr 24 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4872991· OSTI ID:22269330

Bharathi, M. N.; Praveen, K. C.; Prakash, A. P. Gnana, ^[1]; Pushpa, N. ^[2]

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1. Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore-570006, Karnataka (India)
2. Department of PG Studies in Physics, JSS College, Ooty Road, Mysore-570025, Karnataka (India)

The effects of 3 MeV proton irradiation on the I-V characteristics of NPN rf power transistors were studied in the dose range of 100 Krad to 100 Mrad. The different electrical characteristics like Gummel, current gain and output characteristics were systematically studied before and after irradiation. The recovery in the I-V characteristics of irradiated NPN BJTs were studied by isochronal and isothermal annealing methods.

• OSTI ID: 22269330
• Journal Information: AIP Conference Proceedings, Vol. 1591, Issue 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
DOSES
ELECTRIC CONDUCTIVITY
IRRADIATION
PROTONS
SILICON
TRANSISTORS