Investigations on Landé factor in a strained Ga{sub x}In{sub 1−x}As/GaAs quantum dot
Journal Article
·
· AIP Conference Proceedings
- Dept. of Physics, SSM Institute of Engineering and Technology, Dindigul-624002, Tamilnadu (India)
The effective excitonic g-factor as functions of dot radius and the Ga alloy content, in a strained Ga{sub x}In{sub 1−x}As/GaAs quantum dot, is numerically measured. The heavy hole excitonic states are studied for various Ga alloy content taking into account the anisotropy, non-parabolicity of the conduction band and the geometrical confinement effects. The quantum dot is considered as spherical dot of InAs surrounded by a GaAs barrier material.
- OSTI ID:
- 22269324
- Journal Information:
- AIP Conference Proceedings, Vol. 1591, Issue 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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