Structural and electrical properties of sol-gel spin coated indium doped cadmium oxide thin films

Journal Article · Thu Apr 24 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4872839· OSTI ID:22269216

Rajammal, R. ^[1]

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1. Department of Physics, M.V.M Govt. Arts College for Women, Dindigul-624001 (India)

The indium doped CdO thin films have been prepared by the sol-gel spin coating technique and the influence of indium doping concentration on the structural and electrical properties of the deposited films has been investigated. The indium doping concentration in the solution has been varied from 0-10 wt% insteps of 2wt%. A indium doping concentration of 6wt% has been found to be optimum for preparing the films and at this stage a minimum resistivity of 5.92×10{sup −4}Ω cm and a maximum carrier concentration of 1.20×10{sup 20}cm{sup −3} have been realized.

• OSTI ID: 22269216
• Journal Information: AIP Conference Proceedings, Vol. 1591, Issue 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM OXIDES
DEPOSITS
DOPED MATERIALS
ELECTRICAL PROPERTIES
INDIUM
SOL-GEL PROCESS
SPIN
THIN FILMS