Evolution of ion-induced nanoparticle arrays on GaAs surfaces

Journal Article · Mon May 05 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4874329· OSTI ID:22269202

Kang, M.; Al-Heji, A. A.; Shende, O.; Huang, S.; Jeon, S.; Beskin, I. ^[1]

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1. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

We have examined the evolution of irradiation-induced Ga nanoparticle (NP) arrays on GaAs surfaces. Focused-ion-beam irradiation of pre-patterned GaAs surfaces induces monotonic increases in the NP volume and aspect ratio up to a saturation ion dose, independent of NP location within the array. Beyond the saturation ion dose, the NP volume continues to increase monotonically while the NP aspect ratio decreases monotonically. In addition, the NP volumes (aspect ratios) are highest (lowest) for the corner NPs. We discuss the relative influences of bulk and surface diffusion on the evolution of Ga NP arrays.

• OSTI ID: 22269202
• Journal Information: Applied Physics Letters, Vol. 104, Issue 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
ION BEAMS
IRRADIATION
SATURATION
SURFACES