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Title: Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory

Abstract

The total ionizing dose (TID) effect of gamma-ray (γ-ray) irradiation on HfOx based resistive random access memory was investigated by electrical and material characterizations. The memory states can sustain TID level ∼5.2 Mrad (HfO{sub 2}) without significant change in the functionality or the switching characteristics under pulse cycling. However, the stability of the filament is weakened after irradiation as memory states are more vulnerable to flipping under the electrical stress. X-ray photoelectron spectroscopy was performed to ascertain the physical mechanism of the stability degradation, which is attributed to the Hf-O bond breaking by the high-energy γ-ray exposure.

Authors:
;  [1]; ; ; ; ;  [2]
  1. School of Computing, Informatics, and Decision Systems Engineering, Arizona State University, Tempe, Arizona 85281 (United States)
  2. School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States)
Publication Date:
OSTI Identifier:
22269192
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GAMMA RADIATION; HAFNIUM OXIDES; IRRADIATION; TITANIUM HYDRIDES; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Fang, Runchen, Yu, Shimeng, School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, Gonzalez Velo, Yago, Chen, Wenhao, Holbert, Keith E., Kozicki, Michael N., and Barnaby, Hugh. Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory. United States: N. p., 2014. Web. doi:10.1063/1.4875748.
Fang, Runchen, Yu, Shimeng, School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, Gonzalez Velo, Yago, Chen, Wenhao, Holbert, Keith E., Kozicki, Michael N., & Barnaby, Hugh. Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory. United States. https://doi.org/10.1063/1.4875748
Fang, Runchen, Yu, Shimeng, School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, Gonzalez Velo, Yago, Chen, Wenhao, Holbert, Keith E., Kozicki, Michael N., and Barnaby, Hugh. 2014. "Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory". United States. https://doi.org/10.1063/1.4875748.
@article{osti_22269192,
title = {Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory},
author = {Fang, Runchen and Yu, Shimeng and School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287 and Gonzalez Velo, Yago and Chen, Wenhao and Holbert, Keith E. and Kozicki, Michael N. and Barnaby, Hugh},
abstractNote = {The total ionizing dose (TID) effect of gamma-ray (γ-ray) irradiation on HfOx based resistive random access memory was investigated by electrical and material characterizations. The memory states can sustain TID level ∼5.2 Mrad (HfO{sub 2}) without significant change in the functionality or the switching characteristics under pulse cycling. However, the stability of the filament is weakened after irradiation as memory states are more vulnerable to flipping under the electrical stress. X-ray photoelectron spectroscopy was performed to ascertain the physical mechanism of the stability degradation, which is attributed to the Hf-O bond breaking by the high-energy γ-ray exposure.},
doi = {10.1063/1.4875748},
url = {https://www.osti.gov/biblio/22269192}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 18,
volume = 104,
place = {United States},
year = {Mon May 05 00:00:00 EDT 2014},
month = {Mon May 05 00:00:00 EDT 2014}
}