Screening effects in ferroelectric resistive switching of BiFeO{sub 3} thin films

Journal Article · Thu May 01 00:00:00 EDT 2014 · APL Materials

DOI:https://doi.org/10.1063/1.4875355· OSTI ID:22269165

Farokhipoor, S., E-mail: [e-mail]; Noheda, B., E-mail: [e-mail] ^[1]

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1. Zernike Institute for Advanced Materials, University of Groningen, 9747 AG Groningen (Netherlands)

We investigate ferroelectric resistive switching in BiFeO{sub 3} thin films by performing local conductivity measurements. By comparing conduction characteristics at artificially up-polarized domains with those at as-grown down-polarized domains, the change in resistance is attributed to the modification of the electronic barrier height at the interface with the electrodes, upon the reversal of the electrical polarization. We also study the effect of oxygen vacancies on the observed conduction and we propose the existence of a different screening mechanism for up and down polarized domains.

• OSTI ID: 22269165
• Journal Information: APL Materials, Vol. 2, Issue 5; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRODES
FERROELECTRIC MATERIALS
OXYGEN
POLARIZATION
THIN FILMS