Sharp semiconductor-to-metal transition of VO{sub 2} thin films on glass substrates

Journal Article · Sat Dec 28 00:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4851655· OSTI ID:22267796

Jian, Jie; Chen, Aiping ^[1]; Zhang, Wenrui ^[2]; Wang, Haiyan ^[1]

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1. Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843-3128 (United States)
2. Material Science and Engineering Program, Texas A and M University, College Station, Texas 77843-3128 (United States)

Outstanding phase transition properties of vanadium dioxide (VO{sub 2}) thin films on amorphous glass were achieved and compared with the ones grown on c-cut sapphire and Si (111) substrates, all by pulsed laser deposition. The films on glass substrate exhibit a sharp semiconductor-to-metal transition (∼4.3 °C) at a near bulk transition temperature of ∼68.4 °C with an electrical resistance change as high as 3.2 × 10{sup 3} times. The excellent phase transition properties of the films on glass substrate are correlated with the large grain size and low defects density achieved. The phase transition properties of VO{sub 2} films on c-cut sapphire and Si (111) substrates were found to be limited by the high defect density.

• OSTI ID: 22267796
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPARATIVE EVALUATIONS
ELECTRIC CONDUCTIVITY
ENERGY BEAM DEPOSITION
GLASS
GRAIN SIZE
LASER RADIATION
METALS
PHASE TRANSFORMATIONS
PULSED IRRADIATION
SAPPHIRE
SEMICONDUCTOR MATERIALS
SUBSTRATES
THIN FILMS
TRANSITION TEMPERATURE
VANADIUM OXIDES