Study on the nitrogen-doped W-Sb-Te material for phase change memory application

Journal Article · Mon Apr 28 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4874262· OSTI ID:22267752

Ren, Kun; Xia, Mengjiao; Ding, Keyuan; Ji, Xinglong ^[1]; Rao, Feng; Song, Zhitang; Wu, Liangcai; Liu, Bo; Feng, Songlin ^[1]

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1. State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

N doping is proposed to enlarge sensing margin of W{sub 0.08}(Sb{sub 2}Te){sub 0.92} based high-temperature phase-change memories (PCMs). The sensing margin is increased from 30 to 5 × 10{sup 3}, with an increase from 145 °C to 158 °C in data retention. The grain size is reduced to 10 nm. The PCM based on N-W{sub 0.08}(Sb{sub 2}Te){sub 0.92} shows the fast operation speed of 30 ns and good cycling ability of >10{sup 3}. By X-ray photoelectron spectroscopy and ab initio calculation, the W atoms are suggested to locate in the Sb positions and interstices of the lattice. The W atoms in interstice will bond to N atoms during N doping.

• OSTI ID: 22267752
• Journal Information: Applied Physics Letters, Vol. 104, Issue 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMS
DOPED MATERIALS
GRAIN SIZE
NITROGEN
TEMPERATURE RANGE 0400-1000 K
X-RAY PHOTOELECTRON SPECTROSCOPY