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Title: Polarity-inverted ScAlN film growth by ion beam irradiation and application to overtone acoustic wave (000-1)/(0001) film resonators

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4874840· OSTI ID:22267713
;  [1];  [2]
  1. Graduate School of Engineering, Nagoya Institute of Technology, Nagoya 466-8555 (Japan)
  2. Kumamoto National College of Technology, Kumamoto 861-1102 (Japan)

Polarity inversion in wurtzite film is generally achieved by the epitaxial growth on a specific under-layer. We demonstrate polarity inversion of c-axis oriented ScAlN films by substrate ion beam irradiation without using buffer layer. Substrate ion beam irradiation was induced by either sputtering a small amount of oxide (as a negative ion source) onto the cathode or by applying a RF bias to the substrate. Polarity of the films was determined by a press test and nonlinear dielectric measurement. Second overtone thickness extensional mode acoustic resonance and suppression of fundamental mode resonance, indicating complete polarity inversion, were clearly observed in bilayer highly oriented (000-1)/(0001) ScAlN film.

OSTI ID:
22267713
Journal Information:
Applied Physics Letters, Vol. 104, Issue 17; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English

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