Reliable reduction of Fermi-level pinning at atomically matched metal/Ge interfaces by sulfur treatment
- Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)
- Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)
This study demonstrates that by using a sulfur (S) treatment on the Ge surface, a reduction in Fermi level pinning can reproducibly be achieved at atomically matched metal/Ge(111) interfaces. The Schottky barrier height for p-type Ge can be controlled by changing the metal work function despite the metal/Ge junctions. The results indicate that the combination of atomic-arrangement matching and S treatment can remove extrinsic factors influencing Fermi level pinning at metal/Ge interfaces.
- OSTI ID:
- 22267709
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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