Effect of reduction of trap charge carrier density in organic field effect transistors by surface treatment of dielectric layer

Dagar, Janardan; Yadav, Vandana; Kumar Singh, Rajiv; Suman, C. K.; Srivastava, Ritu; Tyagi, Priyanka

doi:10.1063/1.4842856

Title: Effect of reduction of trap charge carrier density in organic field effect transistors by surface treatment of dielectric layer

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Abstract

In this work, we have studied the effect of surface treatment of SiO{sub 2} dielectric layer on the reduction of the trap charge carrier density at dielectric/semiconducting interface by fabricating a metal–insulator–semiconductor (MIS) device using α, ω-dihexylcarbonylquaterthiophene as semiconducting layer. SiO{sub 2} dielectric layer has been treated with 1,1,1,3,3,3-hexamethyldisilazane (HMDS) to modify the chemical group acting as charge traps. Capacitance-voltage measurements have been performed on MIS devices fabricated on SiO{sub 2} and HMDS treated SiO{sub 2}. These data have been used for the calculation of trap charge carrier density and Debye length at the dielectric-semiconductor interface. The calculated trap charge carrier density has been found to reduce from (2.925 ± 0.049) × 10{sup 16} cm{sup −3} to (2.025 ± 0.061) × 10{sup 16} cm{sup −3} for the MIS device with HMDS treated SiO{sub 2} dielectric in comparison to that of untreated SiO{sub 2}. Next, the effect of reduction in trap charge carrier density has been studied on the performance of organic field effect transistors. The improvement in the device parameters like mobility, on/off ratio, and gate leakage current has been obtained with the effect of the surface treatment. The charge carrier mobility has been improved by a factor of 2 through this treatment. Further, the influence of the treatment wasmore »« less

Authors:

Dagar, Janardan; Yadav, Vandana; Kumar Singh, Rajiv; Suman, C. K.; Srivastava, Ritu ^[1]; Tyagi, Priyanka ^[1]

Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, CSIR-Network of Institute for Solar Energy (NISE), Dr. K.S.Krishnan Road, New Delhi 110012 (India)

Publication Date:: Sat Dec 14 00:00:00 EST 2013

OSTI Identifier:: 22266168

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 114; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; CAPACITANCE; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; DEBYE LENGTH; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; FOURIER TRANSFORM SPECTROMETERS; INTERFACES; LEAKAGE CURRENT; REDUCTION; SEMICONDUCTOR MATERIALS; SILICA; SILICON OXIDES; SURFACE TREATMENTS; TRAPS

Citation Formats


                    Dagar, Janardan, Yadav, Vandana, Kumar Singh, Rajiv, Suman, C. K., Srivastava, Ritu, Tyagi, Priyanka, and Center for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi 110016. Effect of reduction of trap charge carrier density in organic field effect transistors by surface treatment of dielectric layer.  United States: N. p., 2013. 
        Web.  doi:10.1063/1.4842856.

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                    Dagar, Janardan, Yadav, Vandana, Kumar Singh, Rajiv, Suman, C. K., Srivastava, Ritu, Tyagi, Priyanka, & Center for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi 110016. Effect of reduction of trap charge carrier density in organic field effect transistors by surface treatment of dielectric layer.  United States.  https://doi.org/10.1063/1.4842856

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                    Dagar, Janardan, Yadav, Vandana, Kumar Singh, Rajiv, Suman, C. K., Srivastava, Ritu, Tyagi, Priyanka, and Center for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi 110016. 2013.  
        "Effect of reduction of trap charge carrier density in organic field effect transistors by surface treatment of dielectric layer".  United States.  https://doi.org/10.1063/1.4842856.

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@article{osti_22266168,

  title        = {Effect of reduction of trap charge carrier density in organic field effect transistors by surface treatment of dielectric layer},

  author       = {Dagar, Janardan and Yadav, Vandana and Kumar Singh, Rajiv and Suman, C. K. and Srivastava, Ritu and Tyagi, Priyanka and Center for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi 110016},

  abstractNote = {In this work, we have studied the effect of surface treatment of SiO{sub 2} dielectric layer on the reduction of the trap charge carrier density at dielectric/semiconducting interface by fabricating a metal–insulator–semiconductor (MIS) device using α, ω-dihexylcarbonylquaterthiophene as semiconducting layer. SiO{sub 2} dielectric layer has been treated with 1,1,1,3,3,3-hexamethyldisilazane (HMDS) to modify the chemical group acting as charge traps. Capacitance-voltage measurements have been performed on MIS devices fabricated on SiO{sub 2} and HMDS treated SiO{sub 2}. These data have been used for the calculation of trap charge carrier density and Debye length at the dielectric-semiconductor interface. The calculated trap charge carrier density has been found to reduce from (2.925 ± 0.049) × 10{sup 16} cm{sup −3} to (2.025 ± 0.061) × 10{sup 16} cm{sup −3} for the MIS device with HMDS treated SiO{sub 2} dielectric in comparison to that of untreated SiO{sub 2}. Next, the effect of reduction in trap charge carrier density has been studied on the performance of organic field effect transistors. The improvement in the device parameters like mobility, on/off ratio, and gate leakage current has been obtained with the effect of the surface treatment. The charge carrier mobility has been improved by a factor of 2 through this treatment. Further, the influence of the treatment was observed by atomic force microscope and Fourier transform infrared spectroscopy techniques.},

  doi          = {10.1063/1.4842856},

  url          = {https://www.osti.gov/biblio/22266168},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 22,

  volume       = 114,

  place        = {United States},

  year         = {Sat Dec 14 00:00:00 EST 2013},

  month        = {Sat Dec 14 00:00:00 EST 2013}

}

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