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Title: Random telegraph signals by alkanethiol-protected Au nanoparticles in chemically assembled single-electron transistors

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4847955· OSTI ID:22266143
 [1];  [1];  [2];  [2];  [2]; ;  [3];  [1]
  1. Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan)
  2. CREST, Japan Science and Technology Agency, Yokohama 226-8503 (Japan)
  3. Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom)

We have studied random telegraph signals (RTSs) in a chemically assembled single-electron transistor (SET) at temperatures as low as 300 mK. The RTSs in the chemically assembled SET were investigated by measuring the source–drain current, using a histogram of the RTS dwell time, and calculating the power spectrum density of the drain current–time characteristics. It was found that the dwell time of the RTS was dependent on the drain voltage of the SET, but was independent of the gate voltage. Considering the spatial structure of the chemically assembled SET, the origin of the RTS is attributed to the trapped charges on an alkanethiol-protected Au nanoparticle positioned near the SET. These results are important as they will help to realize stable chemically assembled SETs in practical applications.

OSTI ID:
22266143
Journal Information:
Journal of Applied Physics, Vol. 114, Issue 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English