Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques

Journal Article · Sat Dec 21 00:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4846218· OSTI ID:22266120

Calleja, E. ^[1]; Rossbach, G.; Butté, R.; Glauser, M.; Levrat, J.; Cosendey, G.; Carlin, J. -F.; Grandjean, N. ^[2]; Réveret, F. ^[3]

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1. Universidad Politécnica de Madrid, Avda. Complutense s/n, 28040 Madrid (Spain)
2. Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)
3. Institut Pascal, UMR 6602 UBP/CNRS, Clermont Université, 24 Avenue des Landais, F-63177 Aubière Cedex (France)

A 3λ/2 (In,Ga)N/GaN resonant cavity, designed for ∼415 nm operation, is grown by molecular beam epitaxy and is sandwiched between a 39.5-period (In,Al)N/GaN distributed Bragg reflector (DBR), grown on c-plane GaN-on-sapphire pseudo-substrate by metal-organic vapor phase epitaxy and an 8-period SiO{sub 2}/ZrO{sub 2} DBR, deposited by electron beam evaporation. Optical characterization reveals an improvement in the cavity emission spectral purity of approximately one order of magnitude due to resonance effects. The combination of spectrophotometric and micro-reflectivity measurements confirms the strong quality (Q)-factor dependence on the excitation spot size. We derive simple analytical formulas to estimate leak and residual absorption losses and propose a simple approach to model the Q-factor and to give a quantitative estimation of the weight of cavity disorder. The model is in good agreement with both transfer-matrix simulation and the experimental findings. We point out that the realization of high Q-factor (In,Ga)N containing microcavities on GaN pseudo-substrates is likely to be limited by the cavity disorder.

• OSTI ID: 22266120
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION
CAVITIES
DEPOSITION
DESIGN
ELECTRON BEAMS
EVAPORATION
EXCITATION
GALLIUM NITRIDES
IMPURITIES
MOLECULAR BEAM EPITAXY
ORGANOMETALLIC COMPOUNDS
REFLECTIVITY
SAPPHIRE
SILICA
SILICON OXIDES
SIMULATION
SPECTROPHOTOMETRY
SUBSTRATES
VAPOR PHASE EPITAXY
ZIRCONIUM OXIDES