High precision laser induced etching of multilayered MoS{sub 2}

Journal Article · Thu Feb 20 00:00:00 EST 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4866622· OSTI ID:22266054

Ko, P. J.; Thu, T. V. ^[1]; Takahashi, H.; Abderrahmane, A.; Takamura, T. ^[2]; Sandhu, A. ^[3]

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1. Electronics-Inspired Interdisciplinary Research Institute, Toyohashi University of Technology, Toyohashi, Aichi 441-8580 (Japan)
2. Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi, Aichi, 441-8580 (Japan)
3. Electronics-Inspired Interdisciplinary Research Institute, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan and Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka (Japan)

We demonstrate a method for reducing the thickness of multilayered MoS{sub 2} to few and single layers by irradiation with a 532 nm wavelength laser spot. The morphology and optical properites of the etched MoS{sub 2} were were measured by atomic force microscopy (AFM) and Raman spectroscopy before and after laser etching. Our laser etching method is a simple and highly effective tool for the fabrication of single, and few layered MoS{sub 2} for atomic scale optical and electronic device applications.

• OSTI ID: 22266054
• Journal Information: AIP Conference Proceedings, Vol. 1585, Issue 1; Conference: IRAGO conference 2013, Aichi (Japan), 24-25 Oct 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ACCURACY
ATOMIC FORCE MICROSCOPY
ELECTRONIC EQUIPMENT
ETCHING
FABRICATION
IRRADIATION
LASERS
LAYERS
MOLYBDENUM SULFIDES
RAMAN SPECTROSCOPY
WAVELENGTHS