Effect of annealing on proton irradiated AlGaN/GaN based micro-Hall sensors

Journal Article · Thu Feb 20 00:00:00 EST 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4866629· OSTI ID:22266043

Abderrahmane, A.; Takahashi, H.; Tashiro, T. ^[1]; Ko, P. J.; Okada, H.; Sandhu, A. ^[2]; Sato, S.; Ohshima, T. ^[3]

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1. Dept. of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 (Japan)
2. Dept. of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan and Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi Universit (Japan)
3. Quantum Beam Science Directorate, Japan Atomic Energy Agency (JAEA), 1233 Watanuki-cho, Takasaki, Gunma 370-1292 (Japan)

The effect of annealing at 673 K on irradiated micro-Hall sensors irradiated with protons at 380keV and fluences of 10{sup 14}, 10{sup 15} and 10{sup 16} protons/cm{sup 2} is reported. Cathodoluminescence measurements were carried out at room temperature before and after annealing and showed improvement in the band edge band emission of the GaN layer. After annealing a sensor irradiated by 10{sup 15} protons/cm{sup 2} the device became operational with improvements in its magnetic sensitivity. All irradiated sensors showed improvement in their electrical characteristics after annealing.

• OSTI ID: 22266043
• Journal Information: AIP Conference Proceedings, Vol. 1585, Issue 1; Conference: IRAGO conference 2013, Aichi (Japan), 24-25 Oct 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ANNEALING
CATHODOLUMINESCENCE
GALLIUM NITRIDES
IRRADIATION
PROTONS
SENSITIVITY
SENSORS