Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters
- Sustainability Research Alliance, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia)
- Physic Department, Faculty of Science, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia)
Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity.
- OSTI ID:
- 22266016
- Journal Information:
- AIP Conference Proceedings, Vol. 1588, Issue 1; Conference: 4. international meeting on frontiers in physics, Kuala Lumpur (Malaysia), 27-30 Aug 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
77 NANOSCIENCE AND NANOTECHNOLOGY
ATOMIC FORCE MICROSCOPY
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
ELECTRIC POTENTIAL
FIELD EMISSION
GALLIUM ARSENIDES
ORGANOMETALLIC COMPOUNDS
OSCILLATIONS
QUANTUM WIRES
SCANNING ELECTRON MICROSCOPY
SOLAR CELLS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
ZINC SULFIDES