Structural and luminescent properties of electron-irradiated silicon
Journal Article
·
· AIP Conference Proceedings
- Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia and Fok Institute of Physics, St. Petersburg State University, 198504 St. Petersburg (Russian Federation)
- Ioffe Physical-Technical Institute, 194021 St. Petersburg (Russian Federation)
- Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia and St. Petersburg State Technical University, 195251 St. Petersburg (Russian Federation)
- Rzhanov Institute of Semiconductor Physics, 630090 Novosibirsk (Russian Federation)
- State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, 310027 Hangzhou (China)
Structural defects induced by electron irradiation of p-Cz-Si wafers were identified. The influence of the annealing conditions in a chlorine-containing atmosphere on the structural and luminescent properties of the samples was examined. Light-emitting diodes based on electron-irradiated and high-temperature-annealed wafers were fabricated by a vapour-phase epitaxy technique and their luminescence properties were studied. A high-intensity dislocation-related D1 line was observed at 1.6 μm in the room-temperature electroluminescence spectrum.
- OSTI ID:
- 22263726
- Journal Information:
- AIP Conference Proceedings, Vol. 1583, Issue 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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