Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing

Journal Article · Fri Feb 21 00:00:00 EST 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4865653· OSTI ID:22263701

Vinattieri, A.; Batignani, F. ^[1]; Bogani, F. ^[2]; Meneghini, M.; Meneghesso, G.; Zanoni, E. ^[3]; Zhu, D.; Humphreys, C. J. ^[4]

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1. Dipartimento di Fisica e Astronomia, LENS, CNISM, Università di Firenze (Italy)
2. Dipartimento di Ingegneria Industriale, Università di Firenze (Italy)
3. Dipartimento di Ingegneria dell'Informazione, Università di Padova (Italy)
4. Department Materials Science, University of Cambridge, Cambridge, CB2 3QZ (United Kingdom)

By means of time integrated (TI), time-resolved (TR) photoluminescence (PL) and PL excitation spectra, we investigate the role of an high temperature post-growth thermal annealing (TA) on a set of InGaN/GaN LED structures with different dislocation densities. We provide evidence of the nature of the radiative recombination from a wide distribution of non-interacting localised states and we show the beneficial effect of thermal annealing in reducing the contribution of non-radiative recombination in the well region.

• OSTI ID: 22263701
• Journal Information: AIP Conference Proceedings, Vol. 1583, Issue 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
DENSITY
DISLOCATIONS
EFFICIENCY
GALLIUM NITRIDES
PHOTOLUMINESCENCE
RECOMBINATION
SPECTRA
TEMPERATURE RANGE 0400-1000 K
TIME RESOLUTION