The Mg impurity in nitride alloys
- Department of Physics, University of Alabama at Birmingham, Birmingham AL (United States)
- Sandia National Laboratory, Albuquerque NM (United States)
- Department of Photonics, Ritsumeikan University, Kusatsu, Shiga (Japan)
- Department of Photonics, Ritsumeikan University, Kusatsu, Shiga, Japan and WCU Program, Department of Materials Science and Engineering, Seoul National University, Seoul (Korea, Republic of)
Although several magnetic resonance studies address the Mg acceptor in GaN, there are few reports on Mg doping in the alloys, where hole production depends strongly on the Al or In content. Our electron paramagnetic resonance (EPR) measurements of the p-type alloys suggest that the Mg impurity retains the axial symmetry, characteristic of a p-type dopant in both alloys; however, In and Al produce additional, different characteristics of the acceptor. In InGaN, the behavior is consistent with a lowering of the acceptor level and increasing hole density as In concentration increases. For AlGaN, the amount of neutral Mg decreases with increasing Al content, which is attributed to different kinetics of hydrogen diffusion thought to occur in samples with higher Al mole fraction.
- OSTI ID:
- 22263700
- Journal Information:
- AIP Conference Proceedings, Vol. 1583, Issue 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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