Electrically-detected ESR in silicon nanostructures inserted in microcavities

Journal Article · Fri Feb 21 00:00:00 EST 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4865648· OSTI ID:22263697

Bagraev, Nikolay; Danilovskii, Eduard; Gets, Dmitrii; Klyachkin, Leonid; Kudryavtsev, Andrey; Kuzmin, Roman; Malyarenko, Anna ^[1]; Gehlhoff, Wolfgang ^[2]; Mashkov, Vladimir; Romanov, Vladimir ^[3]

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1. Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg (Russian Federation)
2. Technische Universitaet Berlin, D-10623, Berlin (Germany)
3. Petersburg State Polytechnical University, Polytekhnicheskaya 29, 195251 St. Petersburg (Russian Federation)

We present the first findings of the new electrically-detected electron spin resonance technique (EDESR), which reveal the point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor δ- barriers. This technique allows the ESR identification without application of an external cavity, as well as a high frequency source and recorder, and with measuring the only response of the magnetoresistance, with internal GHz Josephson emission within frameworks of the normal-mode coupling (NMC) caused by the microcavities embedded in the Si-QW plane.

• OSTI ID: 22263697
• Journal Information: AIP Conference Proceedings, Vol. 1583, Issue 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COUPLING
ELECTRON SPIN RESONANCE
EMISSION
MAGNETORESISTANCE
POINT DEFECTS
QUANTUM WELLS
SILICON
SUPERCONDUCTORS