Nonradiative coherent carrier captures and defect reaction at deep-level defects via phonon-kick mechanism

Journal Article · Fri Feb 21 00:00:00 EST 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4865636· OSTI ID:22263689

Wakita, Masaki; Suzuki, Kei; Shinozuka, Yuzo ^[1]

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1. Faculty of Systems Engineering, Wakayama University, 930 Sakaedani, Wakayama 640-8510 (Japan)

We simulated the time evolution of electron-lattice coupling mode, and a series of nonradiative carrier captures by a deep-level defect in a semiconductor. For lattice relaxation energy of the order of the band gap, a series of coherent (athermal) electron and hole captures by a defect is possible for high carrier densities, which results in an inflation in the induced lattice vibration, which in turn enhances a defect reaction.

• OSTI ID: 22263689
• Journal Information: AIP Conference Proceedings, Vol. 1583, Issue 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPTURE
CARRIER DENSITY
DEFECTS
ELECTRONS
PHONONS
SEMICONDUCTOR MATERIALS
SIMULATION