Magnetic domain wall manipulation in (Ga,Mn)As nanostructures for spintronic applications

Journal Article · Fri Feb 21 00:00:00 EST 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4865631· OSTI ID:22263685

Wosinski, Tadeusz; Andrearczyk, Tomasz; Figielski, Tadeusz; Olender, Karolina; Wrobel, Jerzy ^[1]; Sadowski, Janusz ^[2]

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1. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02-668 Warsaw (Poland)
2. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02-668 Warsaw, Poland and MAX-IV Laboratory, Lund University, P.O. Box 118, SE-221 00 Lund (Sweden)

Ring-shaped nanostructures have been designed and fabricated by electron-beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As. The nanostructures, in a form of planar rings with a slit, were supplied with four electrical terminals and subjected to magneto-transport studies under planar weak magnetic field. Magnetoresistive effects caused by manipulation of magnetic domain walls and magnetization reversal in the nanostructures have been investigated and possible applications of the nanostructures as four-terminal spintronic devices are discussed.

• OSTI ID: 22263685
• Journal Information: AIP Conference Proceedings, Vol. 1583, Issue 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
DESIGN
ELECTRON BEAMS
EPITAXY
ETCHING
LAYERS
MAGNETIC FIELDS
MAGNETIZATION
MAGNETORESISTANCE
NANOSTRUCTURES