Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n{sup +}–p structures

Journal Article · Fri Feb 21 00:00:00 EST 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4865618· OSTI ID:22263674

Makarenko, L. F. ^[1]; Lastovskii, S. B.; Korshunov, F. P. ^[2]; Moll, M. ^[3]; Pintilie, I. ^[4]; Abrosimov, N. V. ^[5]

---

1. Belarusian State University, Minsk (Belarus)
2. Scientific-Practical Materials Research Centre of NAS of Belarus (Belarus)
3. CERN, Geneva (Switzerland)
4. National Institute of Materials Physics, Magurele (Romania)
5. Leibniz Institute for Crystal Growth, Berlin (Germany)

New findings on the formation and annealing of interstitial boron-interstitial oxygen complex (B{sub i}O{sub i}) in p-type silicon are presented. Different types of n+−p structures irradiated with electrons and alpha-particles have been used for DLTS and MCTS studies. Electronic excitation essentially changes the formation rate of B{sub i}O{sub i}. It has been found that the increase of oxygen content slows the B{sub i}O{sub i} annealing rate down. The activation energy of the B{sub i}O{sub i} dissociation has been determined and it was found that germanium doping does not change the activation energy.

• OSTI ID: 22263674
• Journal Information: AIP Conference Proceedings, Vol. 1583, Issue 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
ALPHA PARTICLES
ANNEALING
BORON
ELECTRONS
GERMANIUM
IRRADIATION
NITROGEN IONS
OXYGEN
OXYGEN COMPLEXES
SILICON