Anomalous output characteristic shift for the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer

Journal Article · Mon Apr 14 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4872057· OSTI ID:22262624

Liu, Siyang; Zhang, Chunwei; Sun, Weifeng ^[1]; Su, Wei; Wang, Shaorong; Ma, Shulang; Huang, Yu ^[2]

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1. National ASIC System Engineering Research Center, Southeast University, Nanjing 210096 (China)
2. CSMC Technologies Corporation, Wuxi 214061 (China)

Anomalous output characteristic shift of the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer is investigated. It shows that the linear drain current has obvious decrease when the output characteristic of fresh device is measured for two consecutive times. The charge pumping experiments demonstrate that the decrease is not from hot-carrier degradation. The reduction of cross section area for the current flowing, which results from the squeezing of the depletion region surrounding the P-top layer, is responsible for the shift. Consequently, the current capability of this special device should be evaluated by the second measured output characteristic.

• OSTI ID: 22262624
• Journal Information: Applied Physics Letters, Vol. 104, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
LAYERS
METALS
OXIDES
SEMICONDUCTOR MATERIALS
TRANSISTORS