Perpendicular exchange bias effect in sputter-deposited CoFe/IrMn bilayers

Journal Article · Mon Apr 14 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4871711· OSTI ID:22262601

Thiyagarajah, Naganivetha; Xu, H. J.; Coey, J. M. D. ^[1]

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1. School of Physics and CRANN, Trinity College, Dublin 2 (Ireland)

CoFe/IrMn bilayers with perpendicular magnetization for various IrMn layer thicknesses exhibit unusual two-step hysteresis loops with both positive and negative loop shifts. Observed at room temperature in the as-grown state, they provide direct evidence of large antiferromagnetic domain formation at the IrMn interface. The exchange bias field reaches 100 mT with an IrMn layer thickness of 4 nm after field annealing at 200 °C–300 °C in 800 mT, which is at least three times as large as the coercivity, and may be useful for reference layers of spin-valves or magnetic tunnel junctions with perpendicular magnetic anisotropy.

• OSTI ID: 22262601
• Journal Information: Applied Physics Letters, Vol. 104, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
ANTIFERROMAGNETISM
DEPOSITS
LAYERS
SPUTTERING
TEMPERATURE RANGE 0273-0400 K
THICKNESS
TUNNEL EFFECT