Spatial density profile of electrons near the LaAlO{sub 3}/SrTiO{sub 3} heterointerface revealed by time-resolved photoluminescence spectroscopy
- Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)
- SLAC National Accelerator Laboratory, Stanford Institute for Materials and Energy Sciences, Menlo Park, California 94025 (United States)
The depth profile of the electron density near the LaAlO{sub 3}/SrTiO{sub 3} heterointerface has been studied by means of time-resolved photoluminescence (PL) spectroscopy. A broad blue PL band is observed at 2.9 eV, originating from the two-carrier radiative recombination of interface-induced electrons and photoexcited holes. The PL lifetime of LaAlO{sub 3}/SrTiO{sub 3} heterointerface is dominated by the three-carrier Auger recombination of electrons and holes and is sensitive to electron density. We tuned the probing depth by changing the excitation photon energy and evaluated the carrier-density profile using the relation between the carrier density and the PL lifetime. Our non-contact probe method based on PL spectroscopy indicates that the carriers are confined within several nanometers in depth near the LaAlO{sub 3}/SrTiO{sub 3} heterostructures.
- OSTI ID:
- 22262593
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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