Growth mechanism of graphene on platinum: Surface catalysis and carbon segregation
- Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg (Sweden)
- Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, CB3 0FA Cambridge (United Kingdom)
- AIXTRON Nanoinstruments Ltd., Swavesey, CB24 4FQ Cambridge (United Kingdom)
- Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)
A model of the graphene growth mechanism of chemical vapor deposition on platinum is proposed and verified by experiments. Surface catalysis and carbon segregation occur, respectively, at high and low temperatures in the process, representing the so-called balance and segregation regimes. Catalysis leads to self-limiting formation of large area monolayer graphene, whereas segregation results in multilayers, which evidently “grow from below.” By controlling kinetic factors, dominantly monolayer graphene whose high quality has been confirmed by quantum Hall measurement can be deposited on platinum with hydrogen-rich environment, quench cooling, tiny but continuous methane flow and about 1000 °C growth temperature.
- OSTI ID:
- 22262584
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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