Microscopic analysis of non-equilibrium dynamics in the semiconductor-laser gain medium

Hader, J.; Moloney, J. V.; Koch, S. W.

doi:10.1063/1.4872316

Title: Microscopic analysis of non-equilibrium dynamics in the semiconductor-laser gain medium

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Abstract

Fully microscopic many-body calculations are used to analyze the carrier dynamics in situations where a strong sub-picosecond pulse interacts with an inverted semiconductor quantum well. Electron-electron and electron-phonon scatterings are calculated on a second Born-Markov level. Intra-subband scatterings on a scale of tens of femtoseconds are shown to quickly re-fill the kinetic holes created in the carrier distributions during the pulse amplification. Even for sub-100 fs pulses, this significantly influences the pulse amplification as well as its spectral dependence. Interband scatterings on a few picosecond timescale limit the possibly achievable repetition rate in pulsed semiconductor lasers.

Authors:

Hader, J.; Moloney, J. V. ^[1]; Koch, S. W. ^[2]

Nonlinear Control Strategies, Inc., 3542 N. Geronimo Ave., Tucson, Arizona 85705, USA and Optical Sciences Center, University of Arizona, Tucson, Arizona 85721 (United States)
Department of Physics and Materials Sciences Center, Philipps Universität Marburg, Renthof 5, 35032 Marburg (Germany)

Publication Date:: Mon Apr 14 00:00:00 EDT 2014

OSTI Identifier:: 22262583

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 104; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; MANY-BODY PROBLEM; PHONONS; PULSES; QUANTUM WELLS; SCATTERING; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS

Citation Formats


                    Hader, J., Moloney, J. V., and Koch, S. W. Microscopic analysis of non-equilibrium dynamics in the semiconductor-laser gain medium.  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4872316.

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                    Hader, J., Moloney, J. V., & Koch, S. W. Microscopic analysis of non-equilibrium dynamics in the semiconductor-laser gain medium.  United States.  https://doi.org/10.1063/1.4872316

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                    Hader, J., Moloney, J. V., and Koch, S. W. 2014.  
        "Microscopic analysis of non-equilibrium dynamics in the semiconductor-laser gain medium".  United States.  https://doi.org/10.1063/1.4872316.

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@article{osti_22262583,

  title        = {Microscopic analysis of non-equilibrium dynamics in the semiconductor-laser gain medium},

  author       = {Hader, J. and Moloney, J. V. and Koch, S. W.},

  abstractNote = {Fully microscopic many-body calculations are used to analyze the carrier dynamics in situations where a strong sub-picosecond pulse interacts with an inverted semiconductor quantum well. Electron-electron and electron-phonon scatterings are calculated on a second Born-Markov level. Intra-subband scatterings on a scale of tens of femtoseconds are shown to quickly re-fill the kinetic holes created in the carrier distributions during the pulse amplification. Even for sub-100 fs pulses, this significantly influences the pulse amplification as well as its spectral dependence. Interband scatterings on a few picosecond timescale limit the possibly achievable repetition rate in pulsed semiconductor lasers.},

  doi          = {10.1063/1.4872316},

  url          = {https://www.osti.gov/biblio/22262583},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 15,

  volume       = 104,

  place        = {United States},

  year         = {Mon Apr 14 00:00:00 EDT 2014},

  month        = {Mon Apr 14 00:00:00 EDT 2014}

}

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