Light induced instability mechanism in amorphous InGaZn oxide semiconductors

Journal Article · Mon Apr 21 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4872227· OSTI ID:22262577

Robertson, John; Guo, Yuzheng ^[1]

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1. Department of Engineering, Cambridge University, Cambridge CB2 1PZ (United Kingdom)

A model of the negative bias illumination stress instability in InGaZn oxide is presented, based on the photo-excitation of electrons from oxygen interstitials. The O interstitials are present to compensate hydrogen donors. The O interstitials are found to spontaneously form in O-rich conditions for Fermi energies at the conduction band edge, much more easily that in related oxides. The excited electrons give rise to a persistent photoconductivity due to an energy barrier to recombination. The formation energy of the O interstitials varies with their separation from the H donors, which leads to a voltage stress dependence on the compensation.

• OSTI ID: 22262577
• Journal Information: Applied Physics Letters, Vol. 104, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRONS
FORMATION HEAT
GALLIUM
INDIUM
INTERSTITIALS
OXIDES
PHOTOCONDUCTIVITY
SEMICONDUCTOR MATERIALS
ZINC