Impact ionization in Al{sub x}Ga{sub 1−x}As{sub y}Sb{sub 1−y} avalanche photodiodes
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)
Avalanche photodiodes (APDs) have been fabricated in order to determine the impact ionization coefficients of electrons (α) and holes (β) in Al{sub x}Ga{sub 1−x}As{sub y}Sb{sub 1−y} lattice matched to GaSb for three alloy compositions: (x = 0.40, y = 0.035), (x = 0.55, y = 0.045), and (x = 0. 65, y = 0.054). The impact ionization coefficients were calculated from photomultiplication measurements made on specially designed APDs, which allowed for both pure electron and pure hole injection in the same device. Photo-multiplication measurements were made at temperatures ranging from 77 K to 300 K for all three alloys. A quasi-physical model with an explicit temperature dependence was used to express the impact ionization coefficients as a function of electric-field strength and temperature. For all three alloys, it was found that α < β at any given temperature. In addition, the values of the impact ionization coefficients were found to decrease as the aluminum concentration of the AlGaAsSb alloy was increased. A value between 1.2 and 4.0 was found for β/α, which is dependent on temperature, alloy composition, and electric-field strength.
- OSTI ID:
- 22262566
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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