Coherent nanocavity structures for enhancement in internal quantum efficiency of III-nitride multiple quantum wells
A “coherent” nanocavity structure has been designed on two-dimensional well-ordered InGaN/GaN nanodisk arrays with an emission wavelength in the green spectral region, leading to a massive enhancement in resonance mode in the green spectra region. By means of a cost-effective nanosphere lithography technique, we have fabricated such a structure on an InGaN/GaN multiple quantum well epiwafer and have observed the “coherent” nanocavity effect, which leads to an enhanced spontaneous emission (SE) rate. The enhanced SE rate has been confirmed by time resolved photoluminescence measurements. Due to the coherent nanocavity effect, we have achieved a massive improvement in internal quantum efficiency with a factor of 88, compared with the as-grown sample, which could be significant to bridge the “green gap” in solid-state lighting.
- OSTI ID:
- 22262562
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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