Controlled synthesis and decoupling of monolayer graphene on SiC(0001)
Abstract
We describe a process for the growth of a single, electronically decoupled graphene layer on SiC(0001). The method involves annealing in disilane to (1) prepare flat, clean substrates, (2) grow a single graphene layer, and (3) electronically decouple the graphene from the substrate. This approach uses a single process gas, at μTorr pressures, with modest substrate temperatures, thus affecting a drastic simplification over other processes described in the literature.
- Authors:
-
- IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
- Publication Date:
- OSTI Identifier:
- 22262552
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 104; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ANNEALING; GRAPHENE; LAYERS; SILANES; SILICON CARBIDES; SUBSTRATES
Citation Formats
Oida, S., Hannon, J. B., and Tromp, R. M. Controlled synthesis and decoupling of monolayer graphene on SiC(0001). United States: N. p., 2014.
Web. doi:10.1063/1.4873116.
Oida, S., Hannon, J. B., & Tromp, R. M. Controlled synthesis and decoupling of monolayer graphene on SiC(0001). United States. https://doi.org/10.1063/1.4873116
Oida, S., Hannon, J. B., and Tromp, R. M. 2014.
"Controlled synthesis and decoupling of monolayer graphene on SiC(0001)". United States. https://doi.org/10.1063/1.4873116.
@article{osti_22262552,
title = {Controlled synthesis and decoupling of monolayer graphene on SiC(0001)},
author = {Oida, S. and Hannon, J. B. and Tromp, R. M.},
abstractNote = {We describe a process for the growth of a single, electronically decoupled graphene layer on SiC(0001). The method involves annealing in disilane to (1) prepare flat, clean substrates, (2) grow a single graphene layer, and (3) electronically decouple the graphene from the substrate. This approach uses a single process gas, at μTorr pressures, with modest substrate temperatures, thus affecting a drastic simplification over other processes described in the literature.},
doi = {10.1063/1.4873116},
url = {https://www.osti.gov/biblio/22262552},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 16,
volume = 104,
place = {United States},
year = {Mon Apr 21 00:00:00 EDT 2014},
month = {Mon Apr 21 00:00:00 EDT 2014}
}
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