Built-in electric field and radiative efficiency of polar (0001) and semipolar (11–22) Al{sub 0.5}Ga{sub 0.5}N/GaN quantum dots

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848291· OSTI ID:22261947

Brault, J.; Kahouli, A.; Leroux, M.; Damilano, B.; Elmaghraoui, D.; Vennéguès, P.; Guillet, T.; Brimont, C. ^[1]

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1. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, CNRS, Rue B.Grégory 06560 Valbonne (France)

We compare the optical properties of ensembles of polar (0001) and semipolar (11–22) Al{sub 0.5}Ga{sub 0.5}N/GaN quantum dots grown by molecular beam epitaxy The polar quantum dot emission shows a huge Stark shift. Using dot height distributions measured by transmission electron microscopy, a simple model allows accounting for the PL energies and lineshapes, and to the screening of the Stark field. The semipolar quantum dots emission show a much weaker Stark effect. High room temperature quantum yields attest the efficiency of 3D-confinement.

• OSTI ID: 22261947
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
EFFICIENCY
ELECTRIC FIELDS
EMISSION
GALLIUM NITRIDES
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
QUANTUM DOTS
STARK EFFECT
TRANSMISSION ELECTRON MICROSCOPY