Ab initio studies of early stages of AlN and GaN growth on 4H-SiC
Journal Article
·
· AIP Conference Proceedings
- Institute of Experimental Physics, University of Wroclaw, PL-50-204 Wroclaw (Poland)
- Institute of Physics, University of Rzeszow, PL -35-959 Rzeszow, Poland and Faculty of Physics, University of Warsaw, PL-00-681 Warsaw (Poland)
- Faculty of Physics, University of Warsaw, PL-00-681 Warsaw (Poland)
Processes of aluminum and gallium adsorption on Si- and C-terminated 4H-SiC(0001) surfaces have been studied within the DFT framework. Al and Ga coverages ranging from a submonolayer to one monolayer have been considered. The results show that Al binds more strongly to both surfaces than Ga and the binding of both metals is stronger to the C-terminated than to Si-terminated surface of SiC. The lateral lattice sites occupied by Al and Ga atoms at one monolayer are different and it is due to a different charge transfer from metal to the substrate.
- OSTI ID:
- 22261940
- Journal Information:
- AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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