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Title: Photoreflectance and photoluminescence study of InAs dots-in-a-well nanostructures

Abstract

InAs quantum dots (QDs), embedded within InGaAs/GaAs/AlAs and GaAs/AlAs quantum wells (QWs), are examined by photoreflectance and photoluminescence techniques. Optical properties and electronic structure of two differently designed dots-in-a-well nanostructures is revealed focusing on the effect of strain-reducing InGaAs layer, which is discussed in detail. It is found that the use of InGaAs capping layer red-shifts the QD ground-state interband transition energy by about 100 meV maintaining strong quantization of the electronic states. The changes in InAs QD electronic properties are ascribed mainly to QD size/shape variation due to decomposition of InGaAs layer during growth process.

Authors:
; ; ; ;  [1]; ; ;  [2]
  1. Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius (Lithuania)
  2. School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT (United Kingdom)
Publication Date:
OSTI Identifier:
22261914
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; DECOMPOSITION; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; GROUND STATES; INDIUM ARSENIDES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM DOTS; QUANTUM WELLS

Citation Formats

Nedzinskas, Ramūnas, Čechavičius, Bronislovas, Kavaliauskas, Julius, Karpus, Vytautas, Valušis, Gintaras, Li, Lianhe, Khanna, Suraj P., and Linfield, Edmund H. Photoreflectance and photoluminescence study of InAs dots-in-a-well nanostructures. United States: N. p., 2013. Web. doi:10.1063/1.4848505.
Nedzinskas, Ramūnas, Čechavičius, Bronislovas, Kavaliauskas, Julius, Karpus, Vytautas, Valušis, Gintaras, Li, Lianhe, Khanna, Suraj P., & Linfield, Edmund H. Photoreflectance and photoluminescence study of InAs dots-in-a-well nanostructures. United States. https://doi.org/10.1063/1.4848505
Nedzinskas, Ramūnas, Čechavičius, Bronislovas, Kavaliauskas, Julius, Karpus, Vytautas, Valušis, Gintaras, Li, Lianhe, Khanna, Suraj P., and Linfield, Edmund H. 2013. "Photoreflectance and photoluminescence study of InAs dots-in-a-well nanostructures". United States. https://doi.org/10.1063/1.4848505.
@article{osti_22261914,
title = {Photoreflectance and photoluminescence study of InAs dots-in-a-well nanostructures},
author = {Nedzinskas, Ramūnas and Čechavičius, Bronislovas and Kavaliauskas, Julius and Karpus, Vytautas and Valušis, Gintaras and Li, Lianhe and Khanna, Suraj P. and Linfield, Edmund H.},
abstractNote = {InAs quantum dots (QDs), embedded within InGaAs/GaAs/AlAs and GaAs/AlAs quantum wells (QWs), are examined by photoreflectance and photoluminescence techniques. Optical properties and electronic structure of two differently designed dots-in-a-well nanostructures is revealed focusing on the effect of strain-reducing InGaAs layer, which is discussed in detail. It is found that the use of InGaAs capping layer red-shifts the QD ground-state interband transition energy by about 100 meV maintaining strong quantization of the electronic states. The changes in InAs QD electronic properties are ascribed mainly to QD size/shape variation due to decomposition of InGaAs layer during growth process.},
doi = {10.1063/1.4848505},
url = {https://www.osti.gov/biblio/22261914}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1566,
place = {United States},
year = {Wed Dec 04 00:00:00 EST 2013},
month = {Wed Dec 04 00:00:00 EST 2013}
}