High quality GaAs single photon emitters on Si substrate
Journal Article
·
· AIP Conference Proceedings
- Dipartimento di Scienza dei Materiali and L-NESS, Università, di Milano Bicocca, Via Cozzi 53,I-20125 Milano (Italy)
- Dipartimento di Fisica e Astronomia, LENS and CNISM, Università, di Firenze, Via Sansone 1, I-50019 Firenze (Italy)
- Dipartimento di Fisica e Astronomia, LENS and CNISM, Universita di Firenze, Via Sansone 1, I-50019 Firenze (Italy)
- Dipartimento di Fisica and L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy)
- CNR-IMEM Institute, Parco Area delle Scienze 31/A, 43100 Parma (Italy)
- Dipartimento di Fisica e Astronomia, LENS and CNISM, Universita, di Firenze, Via Sansone 1, I-50019 Firenze (Italy)
We describe a method for the direct epitaxial growth of a single photon emitter, based on GaAs quantum dots fabricated by droplet epitaxy, working at liquid nitrogen temperatures on Si substrates. The achievement of quantum photon statistics up to T=80 K is directly proved by antibunching in the second order correlation function as measured with a H anbury Brown and Twiss interferometer.
- OSTI ID:
- 22261887
- Journal Information:
- AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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