High quality GaAs single photon emitters on Si substrate

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848471· OSTI ID:22261887

Bietti, S.; Sanguinetti, S. ^[1]; Cavigli, L.; Accanto, N.; Vinattieri, A. ^[2]; Minari, S.; Abbarchi, M. ^[3]; Isella, G. ^[4]; Frigeri, C. ^[5]; Gurioli, M. ^[6]

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1. Dipartimento di Scienza dei Materiali and L-NESS, Università, di Milano Bicocca, Via Cozzi 53,I-20125 Milano (Italy)
2. Dipartimento di Fisica e Astronomia, LENS and CNISM, Università, di Firenze, Via Sansone 1, I-50019 Firenze (Italy)
3. Dipartimento di Fisica e Astronomia, LENS and CNISM, Universita di Firenze, Via Sansone 1, I-50019 Firenze (Italy)
4. Dipartimento di Fisica and L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy)
5. CNR-IMEM Institute, Parco Area delle Scienze 31/A, 43100 Parma (Italy)
6. Dipartimento di Fisica e Astronomia, LENS and CNISM, Universita, di Firenze, Via Sansone 1, I-50019 Firenze (Italy)

We describe a method for the direct epitaxial growth of a single photon emitter, based on GaAs quantum dots fabricated by droplet epitaxy, working at liquid nitrogen temperatures on Si substrates. The achievement of quantum photon statistics up to T=80 K is directly proved by antibunching in the second order correlation function as measured with a H anbury Brown and Twiss interferometer.

• OSTI ID: 22261887
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
DROPLETS
EPITAXY
GALLIUM ARSENIDES
LIQUIDS
NITROGEN
PHOTONS
QUANTUM DOTS
SUBSTRATES