A hybrid double-dot in silicon

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848452· OSTI ID:22261873

Gonzalez-Zalba, M. F.; Heiss, D.; Ferguson, A. J. ^[1]

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1. Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge (United Kingdom)

We report electrical measurements of a single arsenic dopant atom in the tunnel barrier of a silicon single-electron transistor (SET). In addition to performing the electrical characterisation of the individual dopants, we study the series electrical transport through the dopant and SET. We measure the bias triangles of this hybrid double-dot and show that we can tune the electrostatic coupling between the two sub-systems. Additionally, we measured SET in which an additional plunger gate allows the reduction of the electron number in the SET down to the few-electron regime where the dot presents well-defined spin configurations. Finally, we discuss the challenges of operating a dopant-dot hybrid system in the few-electron regime.

• OSTI ID: 22261873
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC
COUPLING
DOPED MATERIALS
ELECTRONS
HYBRID SYSTEMS
HYBRIDIZATION
SILICON
TRANSISTORS