Observation of negative differential capacitance (NDC) in Ti Schottky diodes on SiGe islands

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848441· OSTI ID:22261864

Rangel-Kuoppa, Victor-Tapio; Jantsch, Wolfgang ^[1]; Tonkikh, Alexander; Zakharov, Nikolay; Werner, Peter ^[2]

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1. Institute of Semiconductor and Solid State Physics, Johannes Kepler Universität, A-4040 Linz (Austria)
2. Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Germany)

The Negative Differential Capacitance (NDC) effect on Ti Schottky diodes formed on n-type Silicon samples with embedded Germanium Quantum Dots (QDs) is observed and reported. The NDC-effect is detected using capacitance-voltage (CV) method at temperatures below 200 K. It is explained by the capture of electrons in Germanium QDs. Our measurements reveal that each Ge QD captures in average eight electrons.

• OSTI ID: 22261864
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITANCE
ELECTRIC POTENTIAL
ELECTRONS
GERMANIUM SILICIDES
QUANTUM DOTS
SCHOTTKY BARRIER DIODES
SILICON