Electronic spectrum of a deterministic single-donor device in silicon
Abstract
We report the fabrication of a single-electron transistor (SET) based on an individual phosphorus dopant that is deterministically positioned between the dopant-based electrodes of a transport device in silicon. Electronic characterization at mK-temperatures reveals a charging energy that is very similar to the value expected for isolated P donors in a bulk Si environment. Furthermore, we find indications for bulk-like one-electron excited states in the co-tunneling spectrum of the device, in sharp contrast to previous reports on transport through single dopants.
- Authors:
-
- Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney, NSW 2052 (Australia)
- Centre for Quantum Computation and Communication Technology, University of Melbourne, VIC 3010 (Australia)
- Publication Date:
- OSTI Identifier:
- 22261863
- Resource Type:
- Journal Article
- Journal Name:
- AIP Conference Proceedings
- Additional Journal Information:
- Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOPED MATERIALS; ELECTRONS; EQUIPMENT; EXCITED STATES; PHOSPHORUS; SILICON; SPECTRA; TUNNEL EFFECT
Citation Formats
Fuechsle, Martin, Miwa, Jill A., Mahapatra, Suddhasatta, Simmons, Michelle Y., and Hollenberg, Lloyd C. L. Electronic spectrum of a deterministic single-donor device in silicon. United States: N. p., 2013.
Web. doi:10.1063/1.4848440.
Fuechsle, Martin, Miwa, Jill A., Mahapatra, Suddhasatta, Simmons, Michelle Y., & Hollenberg, Lloyd C. L. Electronic spectrum of a deterministic single-donor device in silicon. United States. https://doi.org/10.1063/1.4848440
Fuechsle, Martin, Miwa, Jill A., Mahapatra, Suddhasatta, Simmons, Michelle Y., and Hollenberg, Lloyd C. L. 2013.
"Electronic spectrum of a deterministic single-donor device in silicon". United States. https://doi.org/10.1063/1.4848440.
@article{osti_22261863,
title = {Electronic spectrum of a deterministic single-donor device in silicon},
author = {Fuechsle, Martin and Miwa, Jill A. and Mahapatra, Suddhasatta and Simmons, Michelle Y. and Hollenberg, Lloyd C. L.},
abstractNote = {We report the fabrication of a single-electron transistor (SET) based on an individual phosphorus dopant that is deterministically positioned between the dopant-based electrodes of a transport device in silicon. Electronic characterization at mK-temperatures reveals a charging energy that is very similar to the value expected for isolated P donors in a bulk Si environment. Furthermore, we find indications for bulk-like one-electron excited states in the co-tunneling spectrum of the device, in sharp contrast to previous reports on transport through single dopants.},
doi = {10.1063/1.4848440},
url = {https://www.osti.gov/biblio/22261863},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1566,
place = {United States},
year = {Wed Dec 04 00:00:00 EST 2013},
month = {Wed Dec 04 00:00:00 EST 2013}
}
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