g-factor anisotropy in nanowire-based InAs quantum dots

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848434· OSTI ID:22261856

D'Hollosy, Samuel; Fábián, Gábor; Baumgartner, Andreas; Schönenberger, Christian ^[1]; Nygård, Jesper ^[2]

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1. Departement of Physics, University of Basel, Klingelbergstr. 82, CH-4056 Basel (Switzerland)
2. Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

The determination and control of the electron g-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the g-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the g-factor from the splitting of Kondo resonances and find that it varies continuously in the range between |g*| = 5 and 15.

• OSTI ID: 22261856
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANISOTROPY
CONTROL
INDIUM ARSENIDES
LANDE FACTOR
MAGNETIC FIELDS
QUANTUM COMPUTERS
QUANTUM DOTS
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SPIN
STACKING FAULTS