Band-structure analysis from photoreflectance spectroscopy in (Ga,Mn)As

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848426· OSTI ID:22261849

Yastrubchak, Oksana; Gluba, Lukasz; Zuk, Jerzy ^[1]; Wosinski, Tadeusz; Andrearczyk, Tomasz; Domagala, Jaroslaw Z. ^[2]; Sadowski, Janusz ^[3]

---

1. Institute of Physics, Maria Curie-Sklodowska University, 20-031 Lublin (Poland)
2. Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland)
3. Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland and MAX-Lab, Lund University, 22100 Lund (Sweden)

Modulation photoreflectance spectroscopy has been applied to study the band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn content. Structural and magnetic properties of the layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. The revealed results of decrease in the band-gap-transition energy in the (Ga,Mn)As layers with increasing Mn content are interpreted in terms of a disordered valence band, extended within the band gap, formed, in highly Mn-doped (Ga,Mn)As, as a result of merging the Mn-related impurity band with the host GaAs valence band.

• OSTI ID: 22261849
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DOPED MATERIALS
ELECTRONIC STRUCTURE
EPITAXY
GALLIUM ARSENIDES
IMPURITIES
MAGNETIC PROPERTIES
SPECTROSCOPY
SQUID DEVICES
X-RAY DIFFRACTION