Low-temperature scanning tunneling microscopy and transport measurements on adsorbate-induced two-dimensional electron systems

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848400· OSTI ID:22261826

Masutomi, Ryuichi; Triyama, Naotaka; Okamoto, Tohru ^[1]

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1. Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)

We have performed not only magnetotransport measurements on two-dimensional electron systems (2DESs) formed at the cleaved surfaces of p-InAs but also observations of the surface morphology of the adsorbate atoms, which induced the 2DES at the surfaces of narrow band-gap semiconductors, with use of a scanning tunneling microscopy. The electron density of the 2DESs is compared to the atomic density of the isolated Ag adatoms on InAs surfaces.

• OSTI ID: 22261826
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPARATIVE EVALUATIONS
ELECTRON DENSITY
ELECTRONS
INDIUM ARSENIDES
SCANNING TUNNELING MICROSCOPY
SEMICONDUCTOR MATERIALS